EFFECT OF LOW-LEVEL BORON DOPING AND ITS IMPLICATION TO THE NATURE OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON

被引：33

作者：

YANG, LY

CATALANO, A

ARYA, RR

BALBERG, I

机构：

[1] Solarex Thin Film Division, Newtown, PA 18940

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 09期

关键词：

D O I：

10.1063/1.103401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Large simultaneous changes in ambipolar diffusion length (Ld) and photoconductivity (σph) were observed with boron doping below 1 ppm. The results can be explained satisfactorily by postulating that electrons and holes interchange their roles as majority or minority carriers at ∼0.4 ppm. The μτ products for both carriers are determined as a function of doping. The light intensity dependences of Ld and σph present new evidence for the existence of the hole trapping centers in a-Si:H and show that doping enhances the sensitizing effect due to these centers.

引用

页码：908 / 910

页数：3

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