NEW FLANGE CORRECTION FORMULA APPLIED TO INTERFACIAL RESISTANCE MEASUREMENTS OF OHMIC CONTACTS TO GAAS

被引:5
作者
LIENEWEG, U
HANNAMAN, DJ
机构
关键词
D O I
10.1109/EDL.1987.26603
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:202 / 204
页数:3
相关论文
共 8 条
[1]   MODELS FOR CONTACTS TO PLANAR DEVICES [J].
BERGER, HH .
SOLID-STATE ELECTRONICS, 1972, 15 (02) :145-&
[2]   LATERAL CURRENT CROWDING EFFECTS ON CONTACT RESISTANCE MEASUREMENTS IN 4 TERMINAL RESISTOR TEST PATTERNS [J].
FINETTI, M ;
SCORZONI, A ;
SONCINI, G .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :524-526
[3]  
KOBER H, 1952, DICT CONFORMAL REPRE, P95
[4]   ANALYSIS AND SCALING OF KELVIN RESISTORS FOR EXTRACTION OF SPECIFIC CONTACT RESISTIVITY [J].
LOH, WM ;
SARASWAT, K ;
DUTTON, RW .
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :105-108
[5]   DIRECT MEASUREMENTS OF INTERFACIAL CONTACT RESISTANCE, END CONTACT RESISTANCE, AND INTERFACIAL CONTACT LAYER UNIFORMITY [J].
PROCTOR, SJ ;
LINHOLM, LW ;
MAZER, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) :1535-1542
[6]  
SCHREYER T, 1986, IEEE WORKSHOP TEST S, P7
[7]   A TWO-DIMENSIONAL ANALYTICAL MODEL OF THE CROSS-BRIDGE KELVIN RESISTOR [J].
SCHREYER, TA ;
SARASWAT, KC .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (12) :661-663
[8]   LSI PROCESSING TECHNOLOGY FOR PLANAR GAAS INTEGRATED-CIRCUITS [J].
WELCH, BM ;
SHEN, Y ;
ZUCCA, R ;
EDEN, RC ;
LONG, SI .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) :1116-1124