DISLOCATION MICROSTRUCTURES ON FLAT AND STEPPED SI SURFACES - GUIDANCE FOR GROWING HIGH-QUALITY GAAS ON (100) SI SUBSTRATES

被引：31

作者：

LO, YH

WU, MC

LEE, H

WANG, S

LILIENTALWEBER, Z

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 17期

关键词：

D O I：

10.1063/1.99124

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1386 / 1388

页数：3

共 6 条

[1] FORMATION OF THE INTERFACE BETWEEN GAAS AND SI - IMPLICATIONS FOR GAAS-ON-SI HETEROEPITAXY [J].

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OLMSTEAD, MA ;

UHRBERG, RIG ;

BACHRACH, RZ .

APPLIED PHYSICS LETTERS, 1987, 51 (07) :523-525

[2] SIGNIFICANT IMPROVEMENT IN CRYSTALLINE QUALITY OF MOLECULAR-BEAM EPITAXIALLY GROWN GAAS ON SI (100) BY RAPID THERMAL ANNEALING [J].

CHAND, N ;

PEOPLE, R ;

BAIOCCHI, FA ;

WECHT, KW ;

CHO, AY .

APPLIED PHYSICS LETTERS, 1986, 49 (13) :815-817

[3] EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES [J].

CHOI, C ;

OTSUKA, N ;

MUNNS, G ;

HOUDRE, R ;

MORKOC, H ;

ZHANG, SL ;

LEVI, D ;

KLEIN, MV .

APPLIED PHYSICS LETTERS, 1987, 50 (15) :992-994

[4]

LO YH, 1987, MATERIALS RES SOC S

[5]

Olmstead M. M., COMMUNICATION

[6] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE [J].

OTSUKA, N ;

CHOI, C ;

NAKAMURA, Y ;

NAGAKURA, S ;

FISCHER, R ;

PENG, CK ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1986, 49 (05) :277-279

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