A SIMULATION STUDY OF HIGH-SPEED SILICON HETEROEMITTER BIPOLAR-TRANSISTORS

被引：18

作者：

UGAJIN, M

KONAKA, S

YOKOYAMA, K

AMEMIYA, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 06期

关键词：

D O I：

10.1109/16.24354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1102 / 1109

页数：8

共 14 条

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