CHARACTERIZATION OF HYDROGENATION AND DEHYDROGENATION OF POST-PLASMA TREATED LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON FILMS

被引：8

作者：

NAKAMURA, M

OHNO, T

KONISHI, N

MIYATA, K

KAMEZAWA, N

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3740 / 3746

页数：7

共 26 条

[21] HYDROGEN IMPLANTATION INTO CVD AMORPHOUS-SILICON [J].

SUZUKI, T ;

HIROSE, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 :91-94

[22] HIGH-CURRENT POST-HYDROGENATED CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON P-I-N-DIODES [J].

SZYDLO, N ;

CHARTIER, E ;

PROUST, N ;

MAGARINO, J ;

KAPLAN, D .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :988-990

[23] EFFECT OF HYDROGENATION ON THE CONDUCTIVITY OF UHV-DEPOSITED AMORPHOUS-SILICON [J].

THOMAS, PA ;

FLACHET, JC .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 51 (01) :55-66

[24] LUMINESCENCE DECAY IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON [J].

TSANG, C ;

STREET, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (05) :601-608

[25] THE POST-HYDROGENATION OF LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED AMORPHOUS-SILICON [J].

WIDMER, AE ;

FEHLMANN, R ;

MAGEE, CW .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 54 (03) :199-205

[26] DEPTH DISTRIBUTIONS OF HYDROGEN-IMPLANTED AND ANNEALED SILICON [J].

WILSON, RG .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1375-1377

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