SILICON MOLECULAR-BEAM EPITAXY - HIGHLIGHTS OF RECENT WORK

被引：7

作者：

BEAN, JC

机构：

[1] ATT Bell Laboratories, Murray Hill, 07974, New Jersey

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1990年 / 19卷 / 10期

关键词：

bipolar transistors; defects; doping; gas source MBE; Si;

D O I：

10.1007/BF02651981

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes highlights of recent work in Si MBE directed at device application of the technique. Topics include studies of doping by solid sources and co-ion-implantation, reduction of particle and metal induced defect levels, gas source MBE and recent results on high speed Ge x Si1-x heterojunction bipolar transistors. © 1990 The Mineral,Metal & Materials Society,Inc.

引用

页码：1055 / 1059

页数：5

共 46 条

[1] MODEL-CALCULATIONS FOR ACCELERATED AS ION DOPING OF SI DURING MOLECULAR-BEAM EPITAXY [J].