SILICON MOLECULAR-BEAM EPITAXY - HIGHLIGHTS OF RECENT WORK

被引:7
作者
BEAN, JC
机构
[1] ATT Bell Laboratories, Murray Hill, 07974, New Jersey
关键词
bipolar transistors; defects; doping; gas source MBE; Si;
D O I
10.1007/BF02651981
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes highlights of recent work in Si MBE directed at device application of the technique. Topics include studies of doping by solid sources and co-ion-implantation, reduction of particle and metal induced defect levels, gas source MBE and recent results on high speed Ge x Si1-x heterojunction bipolar transistors. © 1990 The Mineral,Metal & Materials Society,Inc.
引用
收藏
页码:1055 / 1059
页数:5
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