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- [1] IMPORTANCE OF CHAIN REACTIONS IN THE PLASMA DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1376 - 1382HALLER, I
- [2] A FLOATING DOUBLE PROBE METHOD FOR MEASUREMENTS IN GAS DISCHARGES[J]. PHYSICAL REVIEW, 1950, 80 (01): : 58 - 68JOHNSON, EOMALTER, L
- [3] GLOW-DISCHARGE DEPOSITION OF A-SI-H FROM PURE SI2H6 AND PURE SIH4[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (02): : L115 - L117MATSUDA, AKAGA, TTANAKA, HMALHOTRA, LTANAKA, K
- [4] INITIAL TRANSIENT PHENOMENA IN THE PLASMA DECOMPOSITION OF SILANE[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 757 - 760NAKAYAMA, YOHTSUCHI, TNAKANO, MKAWAMURA, T
- [5] INITIAL TRANSIENT PHENOMENA IN THE PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION PROCESS[J]. APPLIED PHYSICS LETTERS, 1984, 45 (02) : 134 - 136NGUYEN, VSPAN, PH
- [7] PREPARATION AND PROPERTIES OF AMORPHOUS-SILICON PRODUCED BY A CONSECUTIVE, SEPARATED REACTION CHAMBER METHOD[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 1107 - 1110OHNISHI, MNISHIWAKI, HENOMOTO, KNAKASHIMA, YTSUDA, STAKAHAMA, TTARUI, HTANAKA, MDOJO, HKUWANO, Y
- [8] DISSOCIATIVE EXCITATION OF SIH4, SID4, SI2H6 AND GEH4 BY 0-100 EV ELECTRON-IMPACT[J]. CHEMICAL PHYSICS, 1983, 80 (03) : 351 - 365PERRIN, JAARTS, JFM
- [9] DIAGNOSTICS AND MODELING OF A METHANE PLASMA USED IN THE CHEMICAL VAPOR-DEPOSITION OF AMORPHOUS-CARBON FILMS[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (08) : 1727 - 1742TACHIBANA, KNISHIDA, MHARIMA, HURANO, Y
- [10] A STUDY OF HYDROGENATED AMORPHOUS-SILICON DEPOSITED BY RF GLOW-DISCHARGE IN SILANE-HYDROGEN MIXTURES[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1812 - 1820VANIER, PEKAMPAS, FJCORDERMAN, RRRAJESWARAN, G