DIFFUSION OF GALLIUM IN THIN GOLD-FILMS ON GAAS

被引：19

作者：

GUPTA, RP

KHOKLE, WS

WUERFL, J

HARTNAGEL, HL

机构：

[1] Semiconductor Devices Area, Central Electronics Engineering Research Institute, Pilani, Rajasthan 333031, India

来源：

THIN SOLID FILMS | 1987年 / 151卷 / 03期

关键词：

CHEMICAL ANALYSIS - GOLD AND ALLOYS - Thin Films - HEAT TREATMENT - SEMICONDUCTING GALLIUM ARSENIDE - SPECTROSCOPY; ELECTRON;

D O I：

10.1016/0040-6090(87)90145-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gold-based multicomponent metallization systems are commonly used for making contacts to GaAs and other compound semiconductors. Gallium has been reported to migrate rapidly in the overlying gold film but quantitative data concerning diffusion of gallium in gold are not available. Therefore electron spectroscopy for chemical analysis (ESCA) investigations were undertaken to determine the diffusivity of gallium in gold, which is of great technological importance particularly for optimizing ohmic and Schottky contacts to GaAs.

引用

页码：L121 / L125

页数：5

共 26 条

[1]

[Anonymous], SEMICOND SEMIMET

[2] OHMIC CONTACTS TO GAAS AND GAXAL1-XAS [J].

BRASLAU, N .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :700-701

[3] LOW RESISTANCE ALLOYED OHMIC CONTACTS TO AL0.48IN0.52AS/N+-GA0.47IN0.53AS [J].

CAPANI, PM ;

MUKHERJEE, SD ;

ZWICKNAGL, P ;

BERRY, JD ;

GRIEM, HT ;

RATHBUN, L ;

EASTMAN, LF .

ELECTRONICS LETTERS, 1984, 20 (11) :446-447

[4] THIN-FILM INTERDIFFUSION .2. TI-RH, TI-PT, TI-RH-AU, AND TI-AU-RH [J].

DEBONTE, WJ ;

POATE, JM ;

MELLIARSMITH, CM ;

LEVESQUE, RA .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (10) :4284-4290

[5] GALLIUM-VACANCY-DEPENDENT DIFFUSION-MODEL OF OHMIC CONTACTS TO GAAS [J].

GUPTA, RP ;

KHOKLE, WS .

SOLID-STATE ELECTRONICS, 1985, 28 (08) :823-830

[6] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS [J].

GYULAI, J ;

MAYER, JW ;

RODRIGUEZ, V ;

YU, AYC ;

GOPEN, HJ .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3578-+

[7]

HEIBLUM M, 1982, SOLID STATE ELECTRON, V25, P185, DOI 10.1016/0038-1101(82)90106-X

[8] THE ROLE OF GERMANIUM IN EVAPORATED AU-GE OHMIC CONTACTS TO GAAS [J].

ILIADIS, A ;

SINGER, KE .

SOLID-STATE ELECTRONICS, 1983, 26 (01) :7-&

[9] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS [J].

KINSBRON, E ;

GALLAGHER, PK ;

ENGLISH, AT .

SOLID-STATE ELECTRONICS, 1979, 22 (05) :517-&

[10]

LIUNG S, 1983, J ELECTROCHEM SOC, V130, P462

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