KINETIC-MODEL AND SIMULATION FOR CHEMICAL AMPLIFICATION RESISTS

被引：22

作者：

FUKUDA, H

OKAZAKI, S

机构：

[1] Hitachi Limited, Central Research Laboratory, Kokubunji

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 02期

关键词：

D O I：

10.1149/1.2086530

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A kinetic model for chemical amplification resist systems is proposed. This model consists of photoacid generation step and acid-catalyzed reactions promoted by both photon and thermal energy. A three-component negative resist SAL601 (Shipley), exposed to a KrF excimer laser, is investigated to determine validity of the model. Assuming simple dissolution characteristics, the model can well explain the exposure dose and postexposure baking condition dependence of the cross-linking and photoabsorption characteristics of this resist. Application of the model to resist profile simulation is also presented. The simulated resist profiles show good agreement with actual resist profiles formed by an excimer laser projection. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：675 / 679

页数：5

共 15 条

[1] MODELING PROJECTION PRINTING OF POSITIVE PHOTORESISTS [J].