STATISTICS OF BREAKDOWN

被引：14

作者：

SHATZKES, M

AVRON, M

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1981年 / 25卷 / 2-3期

关键词：

D O I：

10.1147/rd.252.0167

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：167 / 175

页数：9

共 13 条

[1]

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[4] DIELECTRIC INSTABILITY AND BREAKDOWN IN SIO2 THIN-FILMS [J].

DISTEFANO, TH ;

SHATZKES, M .

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[5] THEORY OF LOCALIZED ELECTRONIC BREAKDOWN IN INSULATING FILMS [J].

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[6] ELECTRICAL BREAKDOWN MECHANISMS IN THIN INSULATORS [J].

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[7] CURRENT RUNAWAY IN INSULATORS AFFECTED BY IMPACT IONIZATION AND RECOMBINATION [J].

KLEIN, N ;

SOLOMON, P .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4364-4372

[8]

KLEIN N, 1971, THIN SOLID FILMS, V7, P151

[9]

ODWYER JJ, 1973, THEORY ELECTRICAL CO

[10] DEFECT-RELATED BREAKDOWN AND CONDUCTION IN SIO2 [J].

SHATZKES, M ;

AVRON, M ;

GDULA, RA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1980, 24 (04) :469-479

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