EFFECTS OF AR+ ANGLE OF INCIDENCE ON THE ETCHING OF SI WITH CL2 AND LOW-ENERGY AR+ IONS

被引：15

作者：

VANZWOL, J

VANLAAR, J

KOLFSCHOTEN, AW

DIELEMAN, J

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 05期

关键词：

D O I：

10.1116/1.583626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1410 / 1414

页数：5

共 33 条

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