LOW-TEMPERATURE STRUCTURE AND PHASE-TRANSITIONS AT THE AU/SI (1OO) INTERFACE

被引:27
作者
MA, Z [1 ]
ALLEN, LH [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 20期
关键词
D O I
10.1103/PhysRevB.48.15484
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-resolution transmission electron microscopy coupled with a STEM nanoprobe reveals that the Au/Si (100) interface deposited at similar to 80 degrees C is not abrupt and contains a disordered Si-rich Au-Si alloy decorated with pure Au nanocrystallites. The presence of oxygen at the Au surface enhances the outdiffusion of Si atoms through the Au overlayer, resulting in the phase transition from a disordered interface to an ordered metastable AU(4)Si phase. Instead, the Au/Si (100) capped with a Ge layer shows that the amorphous structure remains relatively stable. These results allow explanations of some unresolved experimental enigmas.
引用
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页码:15484 / 15487
页数:4
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