EFFECT OF A SURFACTANT ON THE GROWTH OF SI/GE HETEROSTRUCTURES

被引：20

作者：

SAKAMOTO, K

MIKI, K

SAKAMOTO, T

YAMAGUCHI, H

OYANAGI, H

MATSUHATA, H

KYOYA, K

机构：

[1] Electrotechnical Laboratory, Tsukuba, 305

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90049-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of a surfactant on the growth of Si/Ge/Si heterostructures has been investigated by means of extended X-ray absorption fine structure and reflection high energy electron diffraction. Antimony as a surfactant partially prevents the mixing of silicon and germanium within 3.8 ML. It has been demonstrated that a major effect of a surfactant is to reduce the surface mobility of growing species which consequently restricts both islanding and segregation with the sacrifice of surface morphology.

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页码：112 / 115

页数：4

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