IMPLANT-INDUCED HIGH-RESISTIVITY REGIONS IN INP AND INGAAS

被引：84

作者：

PEARTON, SJ

ABERNATHY, CR

PANISH, MB

HAMM, RA

LUNARDI, LM

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：656 / 662

页数：7

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