TEMPERATURE AND EPI THICKNESS DEPENDENCE OF THE HEAVY-ION INDUCED LATCHUP THRESHOLD FOR A CMOS/EPI 16K STATIC RAM

被引：19

作者：

SMITH, LS ^{[1
]}

NICHOLS, DK ^{[1
]}

COSS, JR ^{[1
]}

PRICE, WE ^{[1
]}

BINDER, D ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,SPACE & COMMUNICAT GRP,LOS ANGELES,CA 90009

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1800 / 1802

页数：3

共 6 条

[1] THE EFFECT OF ELEVATED-TEMPERATURE ON LATCHUP AND BIT ERRORS IN CMOS DEVICES [J].

KOLASINSKI, WA ;

KOGA, R ;

SCHNAUSS, E ;

DUFFEY, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1605-1609

[2] A SUMMARY OF JPL SINGLE EVENT UPSET TEST DATA FROM MAY 1982, THROUGH JANUARY 1984 [J].

NICHOLS, DK ;

PRICE, WE ;

MALONE, CJ ;

SMITH, LS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1186-1189

[3]

NICHOLS DK, 1986, IEEE T NUCL SCI, V33, P1696

[4] SINGLE EVENT EFFECTS IN HIGH-DENSITY CMOS SRAMS [J].

SHIONO, N ;

SAKAGAWA, Y ;

SEKIGUCHI, M ;

SATO, K ;

SUGAI, I ;

HATTORI, T ;

HIRAO, Y .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1632-1636

[5] THEORY OF SINGLE EVENT LATCHUP IN COMPLEMENTARY METAL-OXIDE SEMICONDUCTOR INTEGRATED-CIRCUITS [J].

SHOGA, M ;

BINDER, D .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1714-1717

[6] SINGLE EVENT UPSET DEPENDENCE ON TEMPERATURE OR AN NMOS/RESISTIVE-LOAD STATIC RAM [J].

STAPOR, WJ ;

JOHNSON, RL ;

XAPSOS, MA ;

FERNALD, KW ;

CAMPBELL, AB ;

BHUVA, BL ;

DIEHL, SE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1610-1615

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