CROSS-SECTIONAL ELECTRON-MICROSCOPY INVESTIGATION OF SILICON AMORPHIZATION DURING HIGH-TEMPERATURE ZINC-ION BOMBARDMENT

被引：4

作者：

FAURE, J

SIMOV, S

KALITZOVA, M

BALOSSIER, G

BHARADWAJ, LM

CLAVERIE, A

BONHOMME, P

机构：

来源：

MICROSCOPY MICROANALYSIS MICROSTRUCTURES | 1990年 / 1卷 / 02期

关键词：

D O I：

10.1051/mmm:0199000102014100

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：141 / 148

页数：8

共 21 条

[1]

BERTI M, 1986, PHYS STATUS SOLIDI A, V94, P95, DOI 10.1002/pssa.2210940110

[2]

BRICE DK, 1975, J APPL PHYS, V46, P385

[3] COMPARISON BETWEEN INTERMEDIATE-ION-BOMBARDMENT-INDUCED AND HEAVY-ION-BOMBARDMENT-INDUCED SILICON AMORPHIZATION AT ROOM-TEMPERATURE [J].

CLAVERIE, A ;

VIEU, C ;

FAURE, J ;

BEAUVILLAIN, J .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 2 (1-3) :99-104

[4] CROSS-SECTIONAL HIGH-RESOLUTION ELECTRON-MICROSCOPY INVESTIGATION OF ARGON-ION IMPLANTATION-INDUCED AMORPHIZATION OF SILICON [J].

CLAVERIE, A ;

VIEU, C ;

FAURE, J ;

BEAUVILLAIN, J .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) :4415-4423

[5] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

APPLIED PHYSICS LETTERS, 1976, 29 (02) :92-93

[6] TEM STUDY OF SILICON LASER ANNEALED AFTER THE IMPLANTATION OF LOW SOLUBILITY DOPANTS [J].

CULLIS, AG ;

WEBBER, HC ;

POATE, JM ;

CHEW, NG .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (JAN) :41-49

[7] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J].

CULLIS, AG ;

SEIDEL, TE ;

MEEK, RL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5188-5198

[8]

ERYU O, 1988, NUCL INSTRUM METH B, V3, P665

[9] OXIDATION OF SI IMPLANTED WITH NONDOPANT, METALLIC-IONS [J].

HOLLAND, OW ;

WHITE, CW ;

PENNYCOOK, SJ .

JOURNAL OF MATERIALS RESEARCH, 1988, 3 (05) :898-906

[10] NEW MODEL FOR DAMAGE ACCUMULATION IN SI DURING SELF-ION IRRADIATION [J].

HOLLAND, OW ;

PENNYCOOK, SJ .

APPLIED PHYSICS LETTERS, 1989, 55 (24) :2503-2505

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