ELECTRICAL-PROPERTIES OF UNDOPED LARGE-GRAIN AND SMALL-GRAIN DIAMOND FILMS

被引：18

作者：

HUANG, BR ^{[1
]}

REINHARD, DK ^{[1
]}

ASMUSSEN, J ^{[1
]}

机构：

[1] MICHIGAN STATE UNIV, DEPT ELECT ENGN, 260 ENGN BLDG, E LANSING, MI 48824 USA

来源：

关键词：

D O I：

10.1016/0925-9635(93)90229-U

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of diamond and of the metal-contact to diamond interface depend strongly on preparation conditions. A microwave plasma assisted chemical vapor deposition technique was used to deposit undoped diamond films with a variety of grain sizes. Schottky barrier contacts were achievable with rectification ratios as high as 2 x 10(5). The current-voltage characteristics of such samples were modeled as a Schottky barrier diode in series with bulk diamond, for which the property of the bulk diamond follows an I is-proportional-to V(m) relationship indicative of space-charge-limited current. Generally the low-voltage rectification ratio, which is indicative of diode quality, increased with increasing grain size for a given set of deposition conditions.

引用

页码：812 / 815

页数：4

共 14 条

[1] SPACE-CHARGE-LIMITED CURRENT IN THIN-FILM DIAMOND [J].

ASHOK, S ;

SRIKANTH, K ;

BADZIAN, A ;

BADZIAN, T ;

MESSIER, R .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :763-765

[2] DUAL-SIDE CONTACT FORMATION ON ISOLATED DIAMOND FILMS [J].

ENGEMANN, J ;

KELLER, H ;

REINHARD, DK ;

HUANG, B ;

ASMUSSEN, J .

APPLIED PHYSICS LETTERS, 1990, 57 (23) :2461-2463

[3] DIAMOND TRANSISTOR PERFORMANCE AND FABRICATION [J].

GEIS, MW .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :669-676

[4] THE ELECTRICAL-PROPERTIES AND DEVICE APPLICATIONS OF HOMOEPITAXIAL AND POLYCRYSTALLINE DIAMOND FILMS [J].

GILDENBLAT, GS ;

GROT, SA ;

BADZIAN, A .

PROCEEDINGS OF THE IEEE, 1991, 79 (05) :647-668

[5] STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF GOLD CHEMICALLY VAPOR-DEPOSITED DIAMOND CONTACT [J].

GOMEZYANEZ, C ;

ALAM, M .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (05) :2303-2308

[6] RECTIFICATION AND INTERNAL PHOTOEMISSION IN METAL CVD DIAMOND AND METAL CVD DIAMOND/SILICON STRUCTURES [J].

GROT, SA ;

LEE, S ;

GILDENBLAT, GS ;

HATFIELD, CW ;

WRONSKI, CR ;

BADZIAN, AR ;

BADZIAN, T ;

MESSIER, R .

JOURNAL OF MATERIALS RESEARCH, 1990, 5 (11) :2497-2501

[7] ELECTRIC FIELD-DEPENDENT CONDUCTIVITY OF POLYCRYSTALLINE DIAMOND THIN-FILMS [J].

HUANG, BR ;

REINHARD, DK .

APPLIED PHYSICS LETTERS, 1991, 59 (12) :1494-1496

[8]

HUANG BR, 1992, THESIS MICHIGAN STAT

[9] OHMIC CONTACTS TO SEMICONDUCTING DIAMOND [J].

MOAZED, KL ;

NGUYEN, R ;

ZEIDLER, JR .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (07) :350-351

[10] ELECTRICAL-CONDUCTION IN UNDOPED DIAMOND FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].

MUTO, Y ;

SUGINO, T ;

SHIRAFUJI, J ;

KOBASHI, K .

APPLIED PHYSICS LETTERS, 1991, 59 (07) :843-845

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