INSULATING GATE INGAAS/INP FIELD-EFFECT TRANSISTORS

被引：7

作者：

TEMKIN, H

CHEN, YK

GARBINSKI, P

TANBUNEK, T

LOGAN, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2534 / 2536

页数：3

共 17 条

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MATTERA, VD ;

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[4] A NEW GA0.47IN0.53AS FIELD-EFFECT TRANSISTOR WITH A LATTICE-MISMATCHED GAAS GATE FOR HIGH-SPEED CIRCUITS [J].

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[5] SILICON-OXIDE ENHANCED SCHOTTKY GATE IN0.53GA0.47AS FETS WITH A SELF-ALIGNED RECESSED GATE STRUCTURE [J].

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[6]

Hayes J. R., 1982, GaInAsP alloy semiconductors, P189

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OHATA, K .

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[8] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

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[9] A STUDY OF FE-DOPANTS FOR GROWTH OF SEMIINSULATING INP BY MOCVD [J].

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[10]

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