INSULATING GATE INGAAS/INP FIELD-EFFECT TRANSISTORS

被引：7

作者：

TEMKIN, H

CHEN, YK

GARBINSKI, P

TANBUNEK, T

LOGAN, RA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期

关键词：

D O I：

10.1063/1.100200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2534 / 2536

页数：3

共 17 条

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PANDE, KP ;

GUTIERREZ, D .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418

[12] DC AND MICROWAVE CHARACTERISTICS OF MODULATION DOPED GA0.47IN0.53AS/INP HFET [J].

SHAHAR, A ;

FEUER, MD ;

KOREN, U ;

MILLER, BI .

ELECTRONICS LETTERS, 1988, 24 (11) :702-703

[13]

SHUBERT EF, 1988, IEEE ELECTRON DEVICE, V9, P145

[14] CALCULATED ELECTRON-MOBILITY OF TWO-DIMENSIONAL ELECTRONS IN ALINAS/INGAAS AND INP/INGAAS SINGLE HETEROSTRUCTURES [J].

TAKEDA, Y ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (10) :1307-1311

[15] MODULATION-DOPED MULTIQUANTUM WELLS IN INP/IN0.53GA0.47AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

TAYLOR, LL ;

KANE, MJ ;

BASS, SJ .

APPLIED PHYSICS LETTERS, 1987, 51 (03) :180-182

[16]

TEMKIN H, 1988, APPL PHYS LETT, V52, P1978

[17] HIGH MOBILITY TWO-DIMENSIONAL ELECTRON-GAS IN INP/GA0.47IN0.53AS HETEROJUNCTIONS GROWN BY LOW-PRESSURE ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

THIJS, PJA ;

LAGEMAAT, JM ;

WOLTJER, R .

ELECTRONICS LETTERS, 1988, 24 (04) :226-227

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