INTERACTION OF COBALT AND FIELD OXIDE DURING LOW-TEMPERATURE FURNACE ANNEALING

被引：2

作者：

CHEN, BS ^{[1
]}

CHEN, MC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU 300, TAIWAN

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 08期

关键词：

ANNEALING; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19920478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interaction of cobalt and thermally grown field oxide (5000 angstrom) during low temperature furnace annealing (600-800-degrees-C) is described. It is found that the isolation function of oxide becomes unreliable and s-pit clusters from in the silicon substrate when the annealing temperature exceeds 700-degrees-C. Therefore, it is essential to limit the first annealing temperature of the selfaligned silicide scheme below 600-degrees-C.

引用

页码：756 / 757

页数：2

共 8 条

[1] INTERACTION OF CO WITH SI AND SIO2 DURING RAPID THERMAL ANNEALING [J].