ION-BOMBARDMENT-ENHANCED PLASMA-ETCHING OF TUNGSTEN WITH NF3/O-2

被引：12

作者：

GREENE, WM ^{[1
]}

HESS, DW ^{[1
]}

OLDHAM, WG ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 05期

关键词：

D O I：

10.1116/1.584216

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1570 / 1572

页数：3

共 18 条

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REINBERG, AR .

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[4] PLASMA-ETCHING OF REFRACTORY GATES FOR VLSI APPLICATIONS [J].

CHOW, TP ;

STECKL, AJ .

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[5]

Golja B., 1985, Microelectronics Journal, V16, P5, DOI 10.1016/S0026-2692(85)80121-X

[6] KINETIC PROCESSES OF NF3 ETCHANT GAS-DISCHARGES [J].

GREENBERG, KE ;

VERDEYEN, JT .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1596-1601

[7] ION TRANSIT THROUGH CAPACITIVELY COUPLED AR SHEATHS - ION CURRENT AND ENERGY-DISTRIBUTION [J].

GREENE, WM ;

HARTNEY, MA ;

OLDHAM, WG ;

HESS, DW .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (05) :1367-1371

[8]

GREENE WM, IN PRESS MATER RES S

[9]

KOHLER K, 1985, J APPL PHYS, V57, P59, DOI 10.1063/1.335396

[10]

PICARD A, 1985, PLASMA CHEM PLASMA P, V5, P33

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