VERY HIGH Q-FACTOR RESONATORS IN MONOCRYSTALLINE SILICON

被引:58
作者
BUSER, RA
DEROOIJ, NF
机构
[1] Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel
关键词
D O I
10.1016/0924-4247(90)85064-B
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A monocrystalline silicon resonant structure is presented here, which shows an extraordinarily high Q factor of 600 000. The dependence of resonance frequency and Q factor on nitrogen pressure is measured and a theoretical curve is calculated for the Q factor. Moreover, both the frequency and the Q factor are measured as a function of temperature, and the temperature co-efficient of the shear modulus G is calculated. Some comments on external and internal damping of these structures are given. © 1990.
引用
收藏
页码:323 / 327
页数:5
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