VERY HIGH Q-FACTOR RESONATORS IN MONOCRYSTALLINE SILICON

被引：58

作者：

BUSER, RA

DEROOIJ, NF

机构：

[1] Institute of Microtechnology, University of Neuchâtel, CH-2000 Neuchâtel

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1990年 / 21卷 / 1-3期

关键词：

D O I：

10.1016/0924-4247(90)85064-B

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monocrystalline silicon resonant structure is presented here, which shows an extraordinarily high Q factor of 600 000. The dependence of resonance frequency and Q factor on nitrogen pressure is measured and a theoretical curve is calculated for the Q factor. Moreover, both the frequency and the Q factor are measured as a function of temperature, and the temperature co-efficient of the shear modulus G is calculated. Some comments on external and internal damping of these structures are given. © 1990.

引用

页码：323 / 327

页数：5

共 11 条

[1] SENSITIVITY AND MODE SPECTRUM OF A FREQUENCY-OUTPUT SILICON PRESSURE SENSOR
ANDRES, MV
FOULDS, KWH
TUDOR, MJ
[J]. SENSORS AND ACTUATORS, 1988, 15 (04): : 417 - 426
[2] BUSER R, 1989, THESIS U NEUCHATEL
[3] RESONANT SILICON STRUCTURES
BUSER, RA
DEROOIJ, NF
[J]. SENSORS AND ACTUATORS, 1989, 17 (1-2): : 145 - 154
[4] THEORY OF OSCILLATING-VANE VACUUM GAUGES
CHRISTIAN, RG
[J]. VACUUM, 1966, 16 (04) : 175 - +
[5] ETCHED SILICON VIBRATING SENSOR
GREENWOOD, JC
[J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1984, 17 (08): : 650 - 652
[6] MICROMACHINING OF SILICON MECHANICAL STRUCTURES
KAMINSKY, G
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 1015 - 1024
[7] Nowick AS, 1972, MAT SCI TECHNOLOGY S
[8] SILICON AS A MECHANICAL MATERIAL
PETERSEN, KE
[J]. PROCEEDINGS OF THE IEEE, 1982, 70 (05) : 420 - 457
[9] RESONANT DIAPHRAGM PRESSURE MEASUREMENT SYSTEM WITH ZNO ON SI EXCITATION
SMITS, JG
TILMANS, HAC
HOEN, K
MULDER, H
VANVUUREN, J
BOOM, G
[J]. SENSORS AND ACTUATORS, 1983, 4 (04): : 565 - 571
[10] WOLFELSCHNEIDER H, 1987, FIBER OPTIC SENSORS, V2, P61

← 1 2 →