FULLY SELF-ALIGNED N-P-N INGAAS/INP HBTS WITH EVALUATION OF THEIR MICROWAVE CHARACTERISTICS

被引：5

作者：

PITZ, G ^{[1
]}

HARTNAGEL, HL ^{[1
]}

MAUSE, K ^{[1
]}

FIEDLER, F ^{[1
]}

BRIGGMANN, D ^{[1
]}

机构：

[1] DEUTSCH BUNDESPOST TELEKOM,INST FORSCH,W-6100 DARMSTADT,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 07期

关键词：

D O I：

10.1016/0038-1101(92)90322-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present results on high-performance fully-self-aligned InGaAs InP SHBTs. A transit frequency f(T) = 77 GHz and a maximum oscillation frequency f(max) = 40 GHz at a collector-emitter voltage of V(CE) = 2 V and a collector current of I(C) = 40 mA have been achieved for transistors with an emitter area of 4 x 16-mu-m2. Maximum noise figures of F(min) = 3.5 dB at 2 GHz and F(min) = 5.5 dB at 18 GHz are obtained at I(C) = 1 mA collector current.

引用

页码：937 / 939

页数：3

共 12 条

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