LI-DOPED ZNSE EPITAXIAL LAYERS BY ION-IMPLANTATION

被引：27

作者：

YODO, T

YAMASHITA, K

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2403 / 2405

页数：3

共 19 条

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[3]

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SAKURAI, F .

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[6]

OKAJIMA M, 1986, 18TH C SOL STAT DEV, P647

[7] ANTIMONY-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

PARK, RM ;

KLEIMAN, J ;

MAR, HA ;

SMITH, TL .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) :2851-2853

[8] PHOTOLUMINESCENCE PROPERTIES OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY [J].

PARK, RM ;

MAR, HA ;

SALANSKY, NM .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :1047-1049

[9] INJECTION ELECTROLUMINESCENCE IN PHOSPHOROUS-ION-IMPLANTED ZNSE P-N-JUNCTION DIODES [J].

PARK, YS ;

SHIN, BK .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (03) :1444-1446

[10] TYPE CONVERSION AND P-N JUNCTION FORMATION IN LITHIUM-ION-IMPLANTED ZNSE [J].

PARK, YS ;

CHUNG, CH .

APPLIED PHYSICS LETTERS, 1971, 18 (03) :99-&

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