RESISTIVITY OF BORON-DOPED POLYCRYSTALLINE SILICON

被引：16

作者：

GHANNAM, MY ^{[1
]}

DUTTON, RW ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 15期

关键词：

D O I：

10.1063/1.99164

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1222 / 1224

页数：3

共 11 条

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[4] STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].

KAMINS, TI .

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[5] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J].

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KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5755-5763

[6] CHARACTERIZATION OF INCOMPLETE ACTIVATION OF HIGH-DOSE BORON IMPLANTS IN SILICON [J].

SCHWETTM.FN .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (04) :1918-1920

[7] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

[8] DIFFUSION OF ARSENIC IN POLYCRYSTALLINE SILICON [J].

SWAMINATHAN, B ;

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DUTTON, RW ;

KAMINS, TI .

APPLIED PHYSICS LETTERS, 1982, 40 (09) :795-798

[9] SHALLOW JUNCTIONS BY HIGH-DOSE AS IMPLANTS IN SI - EXPERIMENTS AND MODELING [J].

TSAI, MY ;

MOREHEAD, FF ;

BAGLIN, JEE ;

MICHEL, AE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3230-3235

[10] PROPERTIES OF ION-IMPLANTED POLYCRYSTALLINE SI LAYERS SUBJECTED TO RAPID THERMAL ANNEALING [J].

WILSON, SR ;

GREGORY, RB ;

PAULSON, WM ;

KRAUSE, SJ ;

GRESSETT, JD ;

HAMDI, AH ;

MCDANIEL, FD ;

DOWNING, RG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (04) :922-929

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