ACTIVATION AND REDISTRIBUTION OF IMPLANTED P AND B IN POLYCRYSTALLINE SI BY RAPID THERMAL-PROCESSING

被引：8

作者：

CHOW, R

POWELL, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.573341

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：892 / 895

页数：4

共 16 条

[1]

CHOW R, 1984, OCT P EL SOC M NEW O, V842, P763

[2]

Cooper C. B. III, 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P739

[3] MOSI2 FORMATION BY RAPID ISOTHERMAL ANNEALING [J].

FULKS, RT ;

POWELL, RA ;

STACY, WT .

ELECTRON DEVICE LETTERS, 1982, 3 (07) :179-181

[4]

ISCOFF R, 1981, SEMICONDUCTOR IN NOV, P69

[5] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J].

KAMINS, TI ;

MANOLIU, J ;

TUCKER, RN .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (01) :83-&

[6] GRAIN-GROWTH DURING TRANSIENT ANNEALING OF AS-IMPLANTED POLYCRYSTALLINE SILICON FILMS [J].

KRAUSE, SJ ;

WILSON, SR ;

PAULSON, WM ;

GREGORY, RB .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :778-780

[7] LATERAL DIFFUSION OF ARSENIC IN LOW-PRESSURE CHEMICAL VAPOR-DEPOSITED POLYCRYSTALLINE SILICON [J].

LEWIS, N ;

GILDENBLAT, G ;

GHEZZO, M ;

KATZ, W ;

SMITH, GA .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :171-172

[8] DOPANT ACTIVATION AND REDISTRIBUTION IN AS+-IMPLANTED POLYCRYSTALLINE SI BY RAPID THERMAL-PROCESSING [J].

POWELL, RA ;

CHOW, R .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) :194-198

[9] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING [J].

POWELL, RA ;

CHOW, R ;

THRIDANDAM, C ;

FULKS, RT ;

BLECH, IA ;

PAN, JDT .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) :380-382

[10]

POWELL RA, 1984, SEMICONDUCTOR IN MAY, P168

← 1 2 →