FORMATION OF EPITAXIAL YTTRIUM SILICIDE ON (111) SILICON

被引：48

作者：

SIEGAL, MP ^{[1
]}

KAATZ, FH ^{[1
]}

GRAHAM, WR ^{[1
]}

SANTIAGO, JJ ^{[1
]}

VANDERSPIEGEL, J ^{[1
]}

机构：

[1] UNIV PENN,MOORE SCH ELECT ENGN,CTR SENSORS TECHNOL,PHILADELPHIA,PA 19104

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 07期

关键词：

D O I：

10.1063/1.344184

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2999 / 3006

页数：8

共 33 条

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