FORMATION OF EPITAXIAL YTTRIUM SILICIDE ON (111) SILICON

被引:47
作者
SIEGAL, MP [1 ]
KAATZ, FH [1 ]
GRAHAM, WR [1 ]
SANTIAGO, JJ [1 ]
VANDERSPIEGEL, J [1 ]
机构
[1] UNIV PENN,MOORE SCH ELECT ENGN,CTR SENSORS TECHNOL,PHILADELPHIA,PA 19104
关键词
D O I
10.1063/1.344184
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:2999 / 3006
页数:8
相关论文
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