BLINK FURNACE ANNEALING OF ION-IMPLANTED SILICON

被引：5

作者：

KUGIMIYA, K

FUSE, G

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1143/JJAP.21.L16

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L16 / L18

页数：3

共 10 条

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