THE STATISTICAL SPUTTERING CONTRIBUTION TO RESOLUTION IN CONCENTRATION-DEPTH PROFILES

被引：69

作者：

SEAH, MP ^{[1
]}

SANZ, JM ^{[1
]}

HOFMANN, S ^{[1
]}

机构：

[1] MAX PLANCK INST MET RES,INST WERKSTOFFWISSENSCH,D-7000 STUTTGART 1,FED REP GER

来源：

关键词：

D O I：

10.1016/0040-6090(81)90486-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：239 / 246

页数：8

共 19 条

[1] DEPTH RESOLUTION OF SPUTTER PROFILING
ANDERSEN, HH
[J]. APPLIED PHYSICS, 1979, 18 (02): : 131 - 140
[2] ANALYSIS OF MONOMOLECULAR LAYERS OF SOLIDS BY SECONDARY ION EMISSION
BENNINGHOVEN, A
[J]. ZEITSCHRIFT FUR PHYSIK, 1970, 230 (05): : 403 - +
[3] INFLUENCE OF SURFACE-DIFFUSION ON TOPOGRAPHY DEVELOPMENT OF AN AMORPHOUS SOLID DURING SPUTTERING
CARTER, G
[J]. JOURNAL OF MATERIALS SCIENCE, 1976, 11 (06) : 1091 - 1098
[4] ERLEWEIN J, 1980, THIN SOLID FILMS, V69, pL39
[5] THEORETICAL TREATMENT OF CASCADE MIXING IN DEPTH PROFILING BY SPUTTERING
HOFER, WO
LITTMARK, U
[J]. PHYSICS LETTERS A, 1979, 71 (5-6) : 457 - 460
[6] EVALUATION OF CONCENTRATION-DEPTH PROFILES BY SPUTTERING IN SIMS AND AES
HOFMANN, S
[J]. APPLIED PHYSICS, 1976, 9 (01): : 59 - 66
[7] Hofmann S., 1980, Surface and Interface Analysis, V2, P148, DOI 10.1002/sia.740020406
[8] DEPTH RESOLUTION IN SPUTTER PROFILING
HOFMANN, S
[J]. APPLIED PHYSICS, 1977, 13 (02): : 205 - 207
[9] HOFMANN S, 1979, WILSON WILSONS COMPR, V9, P89
[10] HONIG RE, 1978, 26TH P ANN C MASS SP, P207