FABRICATION AND CHARACTERIZATION OF SILICON MICROMACHINED THRESHOLD ACCELEROMETERS

被引:38
作者
LOKE, Y [1 ]
MCKINNON, GH [1 ]
BRETT, MJ [1 ]
机构
[1] UNIV ALBERTA,DEPT ELECT ENGN,EDMONTON T6G 2G7,ALBERTA,CANADA
关键词
D O I
10.1016/0924-4247(91)80020-P
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes the development of a threshold accelerometer for sensing very high acceleration levels. The device, which is fabricated by silicon micromachining techniques, comprises an array of eight normally open switches, each having a different acceleration threshold. Each switch is a miniature silicon dioxide cantilever beam, only 2.2-mu-m in thickness, with metallization running along its length and fabricated on the surface of a silicon wafer. Under an applied acceleration, the cantilever beam deflects across a 2.5-mu-m gap and makes contact with another electrode, thus closing a switch. Electrostatic and static centrifuge testing have been performed on the devices. Closing the switches (beams 120 to 400-mu-m long and 80-mu-m wide) electrostatically with voltages in the 10 to 70 V region provides a convenient way to pre-test the beams for closure. Under static centrifuge testing, a maximum of 20 000 g was measured with a cantilever beam 180-mu-m long and 80-mu-m wide.
引用
收藏
页码:235 / 240
页数:6
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