INTERFACE PROPERTIES OF HGCDTE METAL-INSULATOR-SEMICONDUCTOR CAPACITORS

被引：30

作者：

YANG, MJ

YANG, CH

KINCH, MA

BECK, JD

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 03期

关键词：

D O I：

10.1063/1.100985

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：265 / 267

页数：3

共 10 条

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[2]

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[6]

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[8] SUMMARY ABSTRACT - STATE CHARACTERIZATION OF THE HG1-XCDXTE PHOTOX SIO2 INTERFACE [J].

TSAU, GH ;

SHER, A ;

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[9]

Willardson R. K., 1981, SEMICONDUCTORS SEMIM, V18

[10] ELECTRICAL-PROPERTIES OF THE SIO2-HGCDTE INTERFACE [J].

WILSON, JA ;

COTTON, VA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1985, 3 (01) :199-202

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