PHOTOCHEMICAL OXIDATION OF (HG,CD)TE - PASSIVATION PROCESSES AND CHARACTERISTICS

被引：17

作者：

JANOUSEK, BK

CARSCALLEN, RC

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.573199

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：195 / 198

页数：4

共 11 条

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[3] PASSIVATION PROPERTIES AND INTERFACIAL CHEMISTRY OF PHOTOCHEMICALLY DEPOSITED SIO2 ON HG0.70CD0.30TE [J].

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[7] SOLID-STATE QUATERNARY PHASE-EQUILIBRIUM DIAGRAM FOR THE HG-CD-TE-O SYSTEM [J].

RHIGER, DR ;

KVAAS, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1712-1718

[8] INITIAL-STAGES OF OXIDE FORMATION ON HGCDTE EXPOSED TO ACTIVATED OXYGEN [J].

SILBERMAN, JA ;

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SPICER, WE ;

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1706-1711

[9] (HGCD)TE-SIO2 INTERFACE STRUCTURE [J].

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SILBERMAN, J ;

LASER, D ;

SPICER, WE ;

MORGEN, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1719-1722

[10] ABSORPTION COEFFICIENTS OF GASES IN THE VACUUM ULTRAVIOLET .2. NITROUS OXIDE [J].

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INN, ECY .

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