IMPURITY CONDUCTION IN SILICON

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[3] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (41): : 560 - 576

[4] BROOKS H, 1956, ADV ELECTRONICS ELEC, V7, P87

[5] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[6] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[7] ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 100 (04): : 1075 - 1078

[8] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[9] ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1952, 88 (04): : 893 - 894

[10] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105

[1] THEORY OF IMPURITY BANDS WITH RANDOMLY DISTRIBUTED CENTERS [J]. PHYSICA, 1954, 20 (11): : 978 - 982

[2] BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355

[3] IMPURITY CONDUCTION IN INDIUM-DOPED GERMANIUM [J]. PHILOSOPHICAL MAGAZINE, 1959, 4 (41): : 560 - 576

[4] BROOKS H, 1956, ADV ELECTRONICS ELEC, V7, P87

[5] IMPURITY CENTERS IN GE AND SI [J]. PHYSICA, 1954, 20 (10): : 845 - 854

[6] BUSCH G, 1946, HELV PHYS ACTA, V19, P463

[7] ELECTRICAL PROPERTIES OF NEAR-DEGENERATE BORON-DOPED SILICON [J]. PHYSICAL REVIEW, 1955, 100 (04): : 1075 - 1078

[8] IMPURITY BAND CONDUCTION IN GERMANIUM AND SILICON [J]. PHYSICAL REVIEW, 1956, 103 (01): : 51 - 60

[9] ENERGY STATES OF OVERLAPPING IMPURITY CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1952, 88 (04): : 893 - 894

[10] ON THE MECHANISM OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1950, 80 (06): : 1104 - 1105