RAPID NUCLEATION IN PULSED LASER HEATED AMORPHOUS SI

[1] BILONI H, 1983, PHYSICAL METALLURGY, P483

[2] TIME-RESOLVED REFLECTIVITY MEASUREMENTS DURING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1160 - 1162

[3] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[4] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1675 - 1681

[5] TRANSIENT NUCLEATION IN CONDENSED SYSTEMS [J]. JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (12) : 6261 - 6276

[6] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (02): : 313 - 321

[7] EXPLOSIVE CRYSTALLIZATION STARTING FROM AN AMORPHOUS-SILICON SURFACE REGION DURING LONG-PULSE LASER IRRADIATION [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (19) : 2203 - 2206

[8] OLSON GL, 1985, MATER RES SOC S P, V35, P25

[9] RECRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS ON SAPPHIRE [J]. THIN SOLID FILMS, 1983, 109 (03) : 263 - 281

[10] ROORDA S, IN PRESS MATER RES S, V100

[1] BILONI H, 1983, PHYSICAL METALLURGY, P483

[2] TIME-RESOLVED REFLECTIVITY MEASUREMENTS DURING EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 49 (18) : 1160 - 1162

[3] CALORIMETRIC STUDIES OF CRYSTALLIZATION AND RELAXATION OF AMORPHOUS SI AND GE PREPARED BY ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1795 - 1804

[4] RECRYSTALLIZATION OF AMORPHIZED POLYCRYSTALLINE SILICON FILMS ON SIO2 - TEMPERATURE-DEPENDENCE OF THE CRYSTALLIZATION PARAMETERS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (05) : 1675 - 1681

[5] TRANSIENT NUCLEATION IN CONDENSED SYSTEMS [J]. JOURNAL OF CHEMICAL PHYSICS, 1983, 79 (12) : 6261 - 6276

[6] CRYSTALLIZATION OF AMORPHOUS SILICON FILMS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 48 (02): : 313 - 321

[7] EXPLOSIVE CRYSTALLIZATION STARTING FROM AN AMORPHOUS-SILICON SURFACE REGION DURING LONG-PULSE LASER IRRADIATION [J]. PHYSICAL REVIEW LETTERS, 1987, 59 (19) : 2203 - 2206

[8] OLSON GL, 1985, MATER RES SOC S P, V35, P25

[9] RECRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS ON SAPPHIRE [J]. THIN SOLID FILMS, 1983, 109 (03) : 263 - 281

[10] ROORDA S, IN PRESS MATER RES S, V100