RECRYSTALLIZATION OF AMORPHOUS-SILICON LAYERS ON SAPPHIRE

被引：12

作者：

PAI, CS ^{[1
]}

LAU, SS ^{[1
]}

SUNI, I ^{[1
]}

机构：

[1] CALTECH,PASADENA,CA 91125

来源：

THIN SOLID FILMS | 1983年 / 109卷 / 03期

关键词：

D O I：

10.1016/0040-6090(83)90116-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：263 / 281

页数：19

共 20 条

[1] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J].

CSEPREGI, L ;

KENNEDY, EF ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3906-3911

[2] REORDERING OF AMORPHOUS LAYERS OF SI IMPLANTED WITH P-31, AS-75, AND B-11 IONS [J].

CSEPREGI, L ;

KENNEDY, EF ;

GALLAGHER, TJ ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4234-4240

[3] CRYSTALLIZATION KINETICS OF AMORPHOUS-GERMANIUM [J].

GERMAIN, P ;

SQUELARD, S ;

BOURGOIN, J ;

GHEORGHIU, A .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) :1909-1913

[4] CRYSTALLIZATION IN AMORPHOUS-GERMANIUM [J].

GERMAIN, P ;

ZELLAMA, K ;

SQUELARD, S ;

BOURGOIN, JC ;

GHEORGHIU, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :6986-6994

[5] ELECTRICAL-CONDUCTIVITY AND CRYSTALLIZATION IN AMORPHOUS-GERMANIUM [J].

GERMAIN, P ;

SQUELARD, S ;

BOURGOIN, JC .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1977, 23 (01) :93-98

[6] LATTICE-DEFECTS AND CRYSTALLIZATION OF AMORPHOUS-GERMANIUM [J].

HIROSE, M ;

HAYAMA, M ;

OSAKA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) :1399-1403

[7] EPITAXIAL-GROWTH OF SI DEPOSITED ON (100) SI [J].

HUNG, LS ;

LAU, SS ;

VONALLMEN, M ;

MAYER, JW ;

ULLRICH, BM ;

BAKER, JE ;

WILLIAMS, P ;

TSENG, WF .

APPLIED PHYSICS LETTERS, 1980, 37 (10) :909-911

[8] AMORPHOUS-CRYSTALLINE TRANSITION IN GERMANIUM FILMS [J].

JOHANNESSEN, JS .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (02) :571-577

[9] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

KENNEDY, EF ;

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4241-4246

[10] KINETICS OF LASER-INDUCED SOLID-PHASE EPITAXY IN AMORPHOUS-SILICON FILMS [J].

KOKOROWSKI, SA ;

OLSON, GL ;

HESS, LD .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :921-926

← 1 2 →