LOW-TEMPERATURE GE HETEROEPITAXY ON GAAS(001)

被引：16

作者：

CHAMBERS, SA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期

关键词：

D O I：

10.1116/1.575920

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：2459 / 2463

页数：5

共 16 条

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[8]

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