RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS

被引：191

作者：

CUSANO, DA

机构：

来源：

SOLID STATE COMMUNICATIONS | 1964年 / 2卷 / 11期

关键词：

D O I：

10.1016/0038-1098(64)90259-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：353 / 358

页数：6

相关论文

共 15 条

[11] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION
NATHAN, MI
BURNS, G
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 89 - 90
[12] SEMICONDUCTOR MASER OF GAAS
QUIST, TM
REDIKER, RH
KEYES, RJ
KRAG, WE
LAX, B
MCWHORTER, AL
ZEIGLER, HJ
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 91 - 92
[13] DONOR-ACCEPTOR PAIR ABSORPTION IN GAAS DIODES AT 2.1-DEGREES-K
SCHAUFELE, RF
STATZ, H
LAVINE, JM
IANNINI, AA
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (03) : 40 - 41
[14] OPTICAL ABSORPTION OF GALLIUM ARSENIDE BETWEEN 0.6 AND 2.75 EV
STURGE, MD
[J]. PHYSICAL REVIEW, 1962, 127 (03): : 768 - +
[15] STIMULATED EMISSION OF EXCITON RECOMBINATION RADIATION IN GAAS P-N JUNCTIONS
WILSON, DK
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (08) : 127 - 129