EFFECT OF A FINITE RF CONDUCTANCE OF NATIVE OXIDE ON INP METAL-INSULATOR SEMICONDUCTOR ADMITTANCE

被引：4

作者：

BOUCHIKHI, B

VALMONT, G

MICHEL, C

RAVELET, S

机构：

[1] Ecole Superieure des Sciences et, Technologies de l'Ingenieur de, Nancy, Vandoeuvre, Fr, Ecole Superieure des Sciences et Technologies de l'Ingenieur de Nancy, Vandoeuvre, Fr

来源：

THIN SOLID FILMS | 1987年 / 150卷 / 2-3期

关键词：

D O I：

10.1016/0040-6090(87)90094-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CAPACITORS

引用

页码：227 / 235

页数：9

共 21 条

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[2]

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[3]

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[4]

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[8] INVERSION-MODE INP MISFET EMPLOYING PHOSPHORUS-NITRIDE GATE INSULATOR [J].

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[10] AN INP MIS DIODE [J].

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