EFFECT OF A FINITE RF CONDUCTANCE OF NATIVE OXIDE ON INP METAL-INSULATOR SEMICONDUCTOR ADMITTANCE

被引：4

作者：

BOUCHIKHI, B

VALMONT, G

MICHEL, C

RAVELET, S

机构：

[1] Ecole Superieure des Sciences et, Technologies de l'Ingenieur de, Nancy, Vandoeuvre, Fr, Ecole Superieure des Sciences et Technologies de l'Ingenieur de Nancy, Vandoeuvre, Fr

来源：

THIN SOLID FILMS | 1987年 / 150卷 / 2-3期

关键词：

D O I：

10.1016/0040-6090(87)90094-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

CAPACITORS

引用

页码：227 / 235

页数：9

共 21 条

[11] DIELECTRIC AND INTERFACIAL CHARACTERISTICS OF MIS STRUCTURES ON INP AND GAAS [J].

LILE, DL ;

COLLINS, DA .

THIN SOLID FILMS, 1979, 56 (1-2) :225-234

[12] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[13] REDUCTION OF INTERFACE STATES AND FABRICATION OF P-CHANNEL INVERSION-TYPE INP-MISFET [J].

OKAMURA, M ;

KOBAYASHI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (10) :L599-L602

[14] CHANNEL MOBILITY ENHANCEMENT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

PANDE, KP ;

GUTIERREZ, D .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :416-418

[15] HIGH MOBILITY N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON SIO2-INP INTERFACE [J].

PANDE, KP ;

NAIR, VKR .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3109-3114

[16] INP MIS TRANSISTORS WITH GROWN-IN SULFUR DIELECTRIC [J].

POST, G ;

DIMITRIOU, P ;

SCAVENNEC, A ;

DUHAMEL, N ;

MIRCEA, A .

ELECTRONICS LETTERS, 1983, 19 (13) :459-461

[17]

SAWADA T, 1982, I PHYS C SER, V65, P415

[18] INTERFACIAL PROPERTIES OF INP AND PHOSPHORUS DEPOSITED AT LOW-TEMPERATURE [J].

SCHACHTER, R ;

OLEGO, DJ ;

BAUMANN, JA ;

BUNZ, LA ;

RACCAH, PM ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1985, 47 (03) :272-274

[19] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES [J].

TERMAN, LM .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :285-299

[20]

Wager J. F., 1985, Physics and chemistry of III-V compound semiconductor interfaces, P165

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