INTERFACIAL PROPERTIES OF INP AND PHOSPHORUS DEPOSITED AT LOW-TEMPERATURE

被引：18

作者：

SCHACHTER, R

OLEGO, DJ

BAUMANN, JA

BUNZ, LA

RACCAH, PM

SPICER, WE

机构：

[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680

[2] STANFORD UNIV,DEPT ELECT ENGN,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

APPLIED PHYSICS LETTERS | 1985年 / 47卷 / 03期

关键词：

D O I：

10.1063/1.96188

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：272 / 274

页数：3

共 17 条

[1]

CASSEY HC, 1979, J APPL PHYS, V50, P3484

[2] SURFACE VACANCIES IN II-VI AND III-V ZINC BLENDE SEMICONDUCTORS [J].

DAW, MS ;

SMITH, DL ;

SWARTS, CA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :508-512

[3] SURFACE-DEFECTS AND FERMI-LEVEL PINNING IN INP [J].

DOW, JD ;

ALLEN, RE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :659-661

[4] CHEMICAL VAPOR-DEPOSITION AND CHARACTERIZATION OF PHOSPHORUS-NITRIDE (P3N5) GATE INSULATORS FOR INP METAL-INSULATOR-SEMICONDUCTOR DEVICES [J].

HIROTA, Y ;

KOBAYASHI, T .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5037-5043

[5] METAL-INSULATOR-SEMICONDUCTOR DIODES FABRICATED ON INP, INGAASP, AND INGAAS [J].

KOBAYASHI, T ;

SHINODA, Y .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3339-3341

[6] INVERSION-LAYERS ON INP [J].

MEINERS, LG ;

LILE, DL ;

COLLINS, DA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1458-1461

[7] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE [J].

MEINERS, LG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1402-1407

[8] SURFACE DONORS AND ACCEPTORS ON GAAS AND INP EXPOSED TO OXYGEN [J].

NEDOLUHA, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :429-433

[9] PASSIVATION OF THE GAAS SURFACE BY AN AMORPHOUS PHOSPHORUS OVERLAYER [J].

OLEGO, DJ ;

SCHACHTER, R ;

BAUMANN, JA .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1127-1129

[10] THE MICROSCOPIC STRUCTURE OF BULK AMORPHOUS RED PHOSPHORUS - A RAMAN-SCATTERING INVESTIGATION [J].

OLEGO, DJ ;

BAUMANN, JA ;

KUCK, MA ;

SCHACHTER, R ;

MICHEL, CG ;

RACCAH, PM .

SOLID STATE COMMUNICATIONS, 1984, 52 (03) :311-314

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