COMPLETE EXPLORATION OF THE SILICON GAP AT THE SI-SIO2 INTERFACE OF MIS TUNNEL-DIODES USING THE CONDUCTANCE TECHNIQUE AT VARIOUS TEMPERATURES AND ILLUMINATION LEVELS

被引：18

作者：

ELSAYED, M

PANANAKAKIS, G

KAMARINOS, G

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 04期

关键词：

D O I：

10.1016/0038-1101(85)90095-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：345 / 357

页数：13

相关论文

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