THE EFFECT OF CONCENTRATION-DEPENDENT DEFECT RECOMBINATION REACTIONS ON PHOSPHORUS DIFFUSION IN SILICON

被引：21

作者：

MULVANEY, BJ ^{[1
]}

RICHARDSON, WB ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT MATH,SAN ANTONIO,TX 78249

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 06期

关键词：

D O I：

10.1063/1.345405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A previous model for phosphorus diffusion in silicon [J. Appl. Phys. 65, 2243 (1989)] is extended to include four additional reactions among substitutional phosphorus, silicon self-interstitials, vacancies, and phosphorus-defect pairs. All reaction rates in the model are based on physically plausible kinetic estimates. The numerical solution to the resulting system of eight coupled partial-differential equations yields profiles in good agreement with experiment.

引用

页码：3197 / 3199

页数：3

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