CHARACTERIZATION OF OXIDE LAYERS GROWN ON IMPLANTED SILICON

被引：6

作者：

FRANCO, G ^{[1
]}

RAINERI, V ^{[1
]}

FRISINA, F ^{[1
]}

RIMINI, E ^{[1
]}

机构：

[1] DIPARTIMENTO FIS,I-95129 CATANIA,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1995年 / 96卷 / 1-2期

关键词：

D O I：

10.1016/0168-583X(94)00463-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Boron ions were implanted at 80 keV for a dose of 2 x 10(15) cm(-2) in crystalline silicon. The silicon crystal was recovered using different annealing processes to produce layers with different secondary defect densities. The quality and the characteristics of the silicon oxide grown on the different surfaces were found to depend on the defects present in the layer immediately under it. The oxide quality was improved by using implanted and annealed silicon with a defect free surface. Iron contaminations, introduced in the wafers at different concentrations (up to 1 x 10(15) cm(-2)), do not affect the oxide layer grown on unimplanted silicon wafers, while it degrades the oxide characteristics of layers grown on implanted and annealed samples. This degradation decreases if the residual damage is reduced by annealing processes.

引用

页码：99 / 103

页数：5

共 7 条

[1] THE FORMATION OF SHALLOW LOW-RESISTANCE SOURCE DRAIN REGIONS FOR VLSI CMOS TECHNOLOGIES [J].