FUNDAMENTAL FACTORS GOVERNING IMPROVED PERFORMANCE OF AL-SI/TI MULTILAYER METALLIZATION FOR VERY LARGE-SCALE INTEGRATION

被引:13
作者
JOSHI, A [1 ]
HU, HS [1 ]
YANEY, DL [1 ]
GARDNER, D [1 ]
SARASWAT, K [1 ]
机构
[1] STANFORD UNIV,INTEGRATED CIRCUIT LAB,STANFORD,CA 94305
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 03期
关键词
D O I
10.1116/1.576085
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1497 / 1503
页数:7
相关论文
共 28 条
[11]  
GARDNER DS, 1987, THESIS STANFORD U
[12]  
GARDNER DS, 1987, MRS S P
[13]   SILICON TAKE-UP BY ALUMINUM CONDUCTORS LAYERED WITH REFRACTORY-METALS [J].
HINODE, K ;
OWADA, N ;
TERADA, T ;
IWATA, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) :700-705
[14]  
HINODE K, 1983, EXTENDED ABSTRACTS E, V831, P678
[15]  
HINODE K, 1986, 3RD P INT IEEE VLSI, P139
[16]   INTERMETALLIC COMPOUNDS OF AL AND TRANSITIONS METALS - EFFECT OF ELECTROMIGRATION IN 1-2-MUM-WIDE LINES [J].
HOWARD, JK ;
WHITE, JF ;
HO, PS .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4083-4093
[17]  
IYER SS, 1984, 1984 P INT REL PHYS
[18]  
JONES RE, 1985, 2ND P INT IEEE VLSI, P194
[19]   REACTIVE ION ETCHING INDUCED CORROSION OF AL AND AL-CU FILMS [J].
LEE, WY ;
ELDRIDGE, JM ;
SCHWARTZ, GC .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2994-2999
[20]   REFRACTORY SILICIDES FOR INTEGRATED-CIRCUITS [J].
MURARKA, SP .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (04) :775-792