EPITAXIAL SILICON DEPOSITION AT 300-DEGREES-C WITH REMOTE PLASMA PROCESSING USING SIH4/H2 MIXTURES

Epitaxial Si films have been deposited on Si(100) at 300-degrees-C by remote plasma-enhanced chemical vapor deposition using SiH4/H-2 mixtures With deposition rates as high as 25 angstrom/min at these low temperatures. Hall measurements of the film show an unintentional doping level of about 1 X 10(17) cm-3 With electron mobilities of 700 cm2 V-1 s-1. Critical to the process is the in situ cleaning of the silicon substrate surface prior to deposition.