INSITU STRESS MEASUREMENTS DURING THERMAL-OXIDATION OF SILICON

被引：47

作者：

KOBEDA, E ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] UNIV N CAROLINA, DEPT CHEM, CHAPEL HILL, NC 27599 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.584709

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：163 / 166

页数：4

相关论文

共 27 条

[1] BARTENEV GM, 1970, STRUCTURE MECHANICAL
[2] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[3] OXIDATION OF SILICON - STRAIN AND LINEAR KINETICS
DOREMUS, RH
[J]. THIN SOLID FILMS, 1984, 122 (03) : 191 - 196
[4] VISCOUS-FLOW OF THERMAL SIO2
EERNISSE, EP
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (06) : 290 - 293
[5] STRESS IN THERMAL SIO2 DURING GROWTH
EERNISSE, FP
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 8 - 10
[6] ROLE OF STRESS ON THE PARABOLIC KINETIC CONSTANT FOR DRY SILICON OXIDATION
FARGEIX, A
GHIBAUDO, G
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 589 - 591
[7] FITCH J, IN PRESS
[8] KINETICS OF THERMAL-OXIDATION OF SILICON IN O2-HCL MIXTURES
HESS, DW
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 735 - 739
[9] A VISCOUS-FLOW MODEL TO EXPLAIN THE APPEARANCE OF HIGH-DENSITY THERMAL SIO2 AT LOW OXIDATION TEMPERATURES
IRENE, EA
TIERNEY, E
ANGILELLO, J
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (11) : 2594 - 2597
[10] SILICON OXIDATION STUDIES - SILICON ORIENTATION EFFECTS ON THERMAL-OXIDATION
IRENE, EA
MASSOUD, HZ
TIERNEY, E
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (06) : 1253 - 1256