MICROSCOPIC MECHANISM FOR ANNEALING OF PHOTOCREATED DANGLING BONDS IN A-SI-H

被引:10
作者
MORIGAKI, K [1 ]
机构
[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 02期
关键词
D O I
10.1143/JJAP.27.L138
中图分类号
O59 [应用物理学];
学科分类号
摘要
18
引用
收藏
页码:L138 / L140
页数:3
相关论文
共 18 条
[1]   HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].
BIEGELSEN, DK ;
STREET, RA ;
TSAI, CC ;
KNIGHTS, JC .
PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846
[2]   QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].
BRODSKY, MH ;
FRISCH, MA ;
ZIEGLER, JF ;
LANFORD, WA .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563
[3]   SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].
CARLSON, DE ;
MAGEE, CW .
APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83
[4]   LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
DERSCH, H ;
STUKE, J ;
BEICHLER, J .
APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458
[5]   NEW EVIDENCE FOR DEFECT CREATION BY HIGH OPTICAL-EXCITATION IN GLOW-DISCHARGE AMORPHOUS-SILICON [J].
HIRABAYASHI, I ;
MORIGAKI, K ;
NITTA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (07) :L357-L360
[6]   KINETICS OF THE METASTABLE OPTICALLY INDUCED ELECTRON-SPIN-RESONANCE IN A-SI-H [J].
LEE, C ;
OHLSEN, WD ;
TAYLOR, PC ;
ULLAL, HS ;
CEASAR, GP .
PHYSICAL REVIEW B, 1985, 31 (01) :100-105
[7]   DEFECT CREATION BY OPTICAL-EXCITATION IN HYDROGENATED AMORPHOUS-SILICON AS ELUCIDATED BY OPTICALLY DETECTED MAGNETIC-RESONANCE [J].
MORIGAKI, K ;
SANO, Y ;
HIRABAYASHI, I .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1982, 51 (01) :147-152
[8]  
MORIGAKI K, 1988, IN PRESS JPN J APPL, V27
[9]   MECHANISMS FOR PECULIAR LOW-TEMPERATURE PHENOMENA IN HYDROGENATED AMORPHOUS-SILICON [J].
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1987, 58 (13) :1344-1347
[10]   DEFECT DYNAMICS AND THE STAEBLER-WRONSKI EFFECT IN HYDROGENATED AMORPHOUS-SILICON [J].
PANTELIDES, ST .
PHYSICAL REVIEW B, 1987, 36 (06) :3479-3482