SOFT BREAKDOWN IN TITANIUM-SILICIDED SHALLOW SOURCE DRAIN JUNCTIONS

被引：56

作者：

LIN, JP ^{[1
]}

BANERJEE, S ^{[1
]}

LEE, J ^{[1
]}

TENG, C ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 05期

关键词：

D O I：

10.1109/55.55246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes the soft breakdown behavior in titanium-silicided shallow source/drain junctions. Electrical characterization of the leakage current in p + /n shallow junctions (Aj = 130 nm) shows that the current increases dramatically with titanium thickness and strongly depends on the reverse-bias voltage. The activation energy of leakage current extracted from the temperature dependence of the current decreases with increasing reverse-bias voltage. This behavior cannot be explained by the simple Shockley-Hall-Read (SHR) generation-recombination mechanism. A new mechanism involving Frenkel-Poole barrier lowering of a trap potential is proposed. © 1990 IEEE

引用

页码：191 / 193

页数：3

共 10 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].