OPTICAL BISTABILITY AT 980 NM IN A STRAINED INGAAS GAAS MULTIPLE-QUANTUM-WELL MICROCAVITY WITH RESONANT PERIODIC NONLINEARITY

被引：13

作者：

PELLAT, D

AZOULAY, R

LEROUX, G

DUGRAND, L

RAFFLE, Y

KUSZELEWICZ, R

OUDAR, JL

机构：

[1] France Telecom, CNET-Paris B, Laboratoire de Bagneux, 92225 Bagneux Cedex, 196 Avenue Henri Ravera

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109328

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a novel monolithic all-optical bistable device operating at 980 nm, based on the dispersive optical nonlinearity of strained InGaAs/GaAs quantum wells located at the antinodes of the microcavity optical field. This design maximizes the interaction with the intracavity field and allowed to use only twelve quantum wells of 10 nm thickness. The first observation of all-optical bistability with strained InGaAs/GaAs quantum wells is reported, with a contrast ratio of 7:1 and a threshold intensity of 1 kW/cm2. The operating wavelength offers key advantages such as the substrate transparency and compatibility with vertical cavity surface emitting lasers.

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页码：2489 / 2491

页数：3

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